SENSITRON SEMICONDUCTOR
TECHNICAL DATA
SPM6G140-060D
Data Sheet 4977 Rev.
-
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown
Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate
Voltage Collector Current (For the module) VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC
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BVCES TC = 25 OC TC = 80 C ICM ICES
O
600 -
-
140 140 200
V A A
IC
2 15 TC = 25 OC TC = 125 C
O
mA mA V
C...