SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 4096, Rev A
SPM6M060-010D
Three-Phase
MOSFET Bridge, With Gate Driver and Optical Isolation
DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE
MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER
MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)
PARAMETER
MOSFET SPECIFICATIONS Drain to Source Breakdown
Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS
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SYMBOL
MIN
TYP
MA X
UNIT
BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V
GS(TH) O
100
-
V
ID
-
-
60 50 100
A
A V nA V
Gate to Source
Voltage Gate-Source Leakage Current , VGS = +/-20V Gate Threshold
Voltage, IC=1mA Zero Gate
Voltage Drain Curren...