SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4171, Rev.
-
SPM6M070-020D
Three-Phase
MOSFET BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE
MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER
MOSFET DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
PARAMETER
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown
Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC TC = 90 C Pulsed Drain Current, Pulse Width limited by TjMax Gate to Source
Voltage
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BVDSS ID
O
200
-
-
V
-
-
70 60
A
IDM VGS IGSS ICSS
-
-
300 +/-20 +/- 200
A V nA
Gate- Source Leakage Current , VGE = +/-20V Zero Gate
Voltage Dr...