SPN2322
Dual N-Channel Enhancement Mode
MOSFET
DESCRIPTION
The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed .
FEATURES 20V/4.
0A,RDS(ON)=26mΩ@VGS=4.
5V 20V/3.
0A,RDS(ON)=35mΩ@VGS=2.
5V 20V/2.
0A,RDS(ON)=50mΩ@VGS=1.
8V Super high density cell design for extremely low
RDS(ON) Exception...