SPP03N60S5

isc N-Channel MOSFET Transistor SPP03N60S5，ISPP03N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.4Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·Ultra low effective capacitance ·Improved transconductance...