CoolMOS™ Power Transistor
Feature • New revolutionary high
voltage technology • Worldwide best RDS(on) in TO-247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPW52N50C3
VDS @ Tjmax 560
V
RDS(on)
0.
07 Ω
ID
52 A
PG-TO247
Type SPW52N50C3
Package PG-TO247
Marking 52N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by T...