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SQM120P10-10m1L
Vishay Siliconix
Automotive P-Channel 100 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.
5 V ID (A) Configuration Package
-100 0.
0101 0.
0150
-120 Single TO-263
FEATURES • TrenchFET® power
MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested • AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
TO-263
S
G
Top View
S D G
D P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current a Continuous Source Current (Diode Cond...