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SQM35N30-97
Vishay Siliconix
Automotive N-Channel 300 V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package
TO-263
300 0.
097
35 Single TO-263
D
FEATURES • TrenchFET® power
MOSFET
• Package with low thermal resistance • AEC-Q101 qualified d
• 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.
vishay.
com/doc?99912
G
Top View
S D G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Av...