SSC8028GT8
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS
RDSon TYP
ID
Applications Desktop Computer Notebook
20V ±16V
11mR@10V 16mR@4V5
12A
Pin configuration
General Description
Top View
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.
This device is
suitable for use as a load switch or in PWM applications.
Package Information
Units:mm
SSC-V1.
0
http://www.
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com h // S i P
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Analog Future
SSC8028GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
ID IDM
...