SSC8030GQ4
N-Channel Enhancement Mode
MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 8 mR@10V 10mR@4V5
ID 19A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB DCDC conversion
Pin configuration
Bottom View
Package Information
SSC-1V0
Package: DFN3X3 http://www.
afsemi.
com
1/4
Analog Future
SSC8030GQ4
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power ...