SSC8030GT8
N-Channel Enhancement Mode
MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 8.
5mR@10V 10.
5mR@4V5
ID 15A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB DCDC conversion
Pin Configuration
Top View
Package Information
Units:mm
SSC-V1.
0
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Analog Future
SSC8030GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total ...