SSC8036GS6
N-Channel Enhancement Mode
MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 24mR@10V 36mR@4V5
ID 6A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices DCDC conversion
Pin configuration
Top View
D 3
Package Information
12 GS
③
①②
SOT23
Units:mm
SSC-V1.
0
http://www.
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1/5
Analog Future
SSC8036GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (Note 1) Plused Drain Cur...