SSC8036GS6B
N-Channel Enhancement Mode
MOSFET
Features
VDS 30V
VGS ±20V
RDSon TYP 19mR@10V 23mR@4V5
ID 5A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices DCDC conversion
Pin configuration
Top View
D 3
Package Information
12 GS
③
①②
SOT23
Units:mm
SSC-V1.
0
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Order information
Device
Package
SSC8036GS6B
SOT23
SSC8036GS6B
Marking
Shipping
3000/Tape&Reel
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symb...