SSC8066GS6
N-Channel Enhancement Mode
MOSFET
Features
VDS 60V
VGS ±20V
RDSon TYP 45mR@10V 80mR@4V5
ID 3A
Applications
Load Switch
Portable Devices DCDC Conversion
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance.
This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package.
Excellent thermal and
electrical capabilities.
Package Information
③ ①②
SSC-V1.
0
SOT23
Units:mm
...