SSC8120GN1
N-Channel Enhancement Mode
MOSFET
Features
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 0.
7A
ESD 1.
2K
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and DMOS trench technology .
This device particularly suits low
voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
➢ Load Switch
➢ Portable Devices ➢ DCDC Conversion
Pin configuration
bottom View
Package Information
SSC-1V0
DFN1006
1/5
http://www.
afsemi.
com
Order information Device
SSC8120GN1
Package DFN1006
SSC8120GN1
Marking
Shipping 10000/Tape&Reel
...