SSC8125GS6A
P-Channel Enhancement Mode
MOSFET with ESD Protection
Features
VDS VGS -20V ±8V
RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5
ID ESD -4A 3kV
Applications
Load Switch
Portable Devices DCDC Conversion
Pin configuration
Top View
D
General Description
This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate
voltages as low as 1.
5V and it is protected from ESD.
These feathures make it suitable for use as a load switch or in PWM applications.
Package Information
GS
SSC-1V0
http://www.
afsemi.
com
1/4
Analog Future
SSC8125GS6A
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter...