SSC8129GQ4
P-Channel Enhancement Mode
MOSFET
Features
VDS -20V
VGS ±12V
RDSon TYP 9mR@-4V5V 13mR@-2V5
ID -18A
Applications
Load Switch
DCDC conversion NB battery
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance.
This device is particularly suited for
low
voltage power management requiring a wild range
of given
voltage ratings(4.
5V~25V) such as load switch
and battery protection.
Package Information
SSC-1V0
Package: DFN3X3
Symbol
A A1 A3 D E D1 E1 k b e L
Dimenions Millimeters
Min.
Max.
0.
700/0.
800 0.
800/0.
900
0.
000
0.
050
0.
203R...