SSC8138GT4
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS
RDSon TYP
ID
Applications Desktop Computer Notebook
4.
8mR@10V
25V ±20V
55A
6mR@4V5
Pin configuration
General Description
Top View
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.
This device is
suitable for use as a load switch or in PWM applications.
S D G
Package Information
Unit: mm TO220
SSC-V1.
0
http://www.
afsemi.
com
1/5
Analog Future
SSC8138GT4
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
ID ID...