SSC8220GT8
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS 20V ±12V
RDSon TYP 3.
5mR@10V 4.
5mR@4V5 6.
0mR@3V3
ID 70A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications Desktop Computer Notebook
Pin Configuration
Top View
Package Information
TO-252
SSC-V1.
0
Units:mm
http://www.
afsemi.
com
1/5
Analog Future
SSC8220GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current Power Dissipation(1)
Continuous Pulsed
Operating and Storage Jun...