SSC8222GN2
N-Channel Enhancement Mode
MOSFET
Features
VDS VGS
20V ±12V
RDSon TYP 5.
6mR@4V5 7.
5mR@2V5 13mR@2V5
ID 10A
Applications
Li-ion battery protection ;
Load swich
Pin configuration
Bottom View
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche
Voltage and Current
General Description The SSC8222GN2 combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
DFN2X2-6L
Package Information
SSC-V1.
0
http://www.
afsemi.
com
1/5
Analog Future...