SSC8326GS1
Dual N-Channel Enhancement Mode
MOSFET
Features
VDS VGS 20V ±12V
RDSon TYP 20mR@4V5 22mR@3V8 24mR@2V5
ID 6A
General Description
This device combines 2 N-channel enhancement mode
MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate
voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Package Information
Applications Li-ion battery; Load swich; Battery charger Pin configuration
Top View
D1 D1 D2 D2
S1 G1 S2 G2
⑧ ⑦ ⑥⑤
①② ③ ④
SOP8 Unit:mm
SSC-1V0
1/5
http://www.
afsemi.
com
Order information
Device
Package
SSC8326GS1
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SSC8326GS...