SSC8330GQ4
Dual Asymmetric N-Channel Enhancement Mode
MOSFET
Features
Applications
Load Switch
VDS
VGS
RDSon TYP
ID
Isolated DC/DC Converters
9.
5 mR@10V
Q1 30V ±20V
15A
12.
5mR@4V5
DCDC conversion in Computing
8 mR@10V
Pin configuration
Q2 30V ±20V
18A
10mR@4V5
Bottom View
Top View
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.
This device is
suitable for use as a load switch or in PWM applications.
Package Information
SSC-1V0
Package: DFN3X3-8L http://www.
afsemi.
com
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Analog Future
SSC8330GQ4
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol...