SSC8415GS6
P-Channel Enhancement Mode
MOSFET
Features
VDS
VGS
-20V ±12V
RDSon TYP 35mR@-4V5 44mR@-2V5
ID -4A
Applications
Load Switch
Portable Devices DCDC conversion Pin Configuration
57mR@-1V8
Top View
General Description
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance.
This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package.
Excellent thermal and
electrical capabilities.
Package Information
D: Drain; G: Gat...