SSC8428GT8
N-Channel Enhancement Mode
MOSFET
Features
VDS
VGS
20V ±12V
RDSon TYP 10mR@10V 11mR@4V5
ID 20A
Applications
Li-ion battery protection ;
Load swich
Pin configuration
Bottom View
16mR@2V5
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche
Voltage and Current General Description The SSC8428GT8 combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
TO-252
Package Information
SSC-V1.
0
Units:mm
http://www.
afsemi.
com
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