SSC8428JN3
Dual N-Channel Enhancement Mode
MOSFET
Features
VDS VGS 20V ±12V
RDSon TYP 13mR@10V 15mR@4V5
ID 8A
Applications
Li-ion battery protection
Load switch
Pin configuration
Top View
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche
Voltage and Current
General Description The SSC8428JN3 combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
DFN3X2
Package Information
SSC-1V0
http://www.
afsemi.
com
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SSC8428JN3
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