SSC8K21GN3
P-Channel Enhancement Mode
MOSFET with Schottky Diode
Features
P-
MOSFET VDS VGS
-20V ±8V
Schottky VR IR 20V 35uA
RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8
VF TYP 410Mv@0.
5A
ID -2A
IO 1A
Applications
Li Battery Charging High Side DC/DC Converter High Side Driver for Brushless DC Motor
Power Management in Portable, Battery
Powered Devices
Pin configuration
Top View
8765 KKDD
General Description
SSC8K21GN3 combines a P-Channel enhancement mode power
MOSFET which is produced with high cell density and DMOS trench technology and a low forward
voltage schottky diode.
the tiny and thin outline saves PCB consumption.
Package Information
KD
AASG 12 3 4
SSC-1V0
P...