Main Product Characteristics
SSF3056C
30V Complementary
MOSFET (Preliminary)
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 37mohm(typ.
) 68mohm(typ.
)
ID 5A
-4.
5A
D1 S1
NMOS
D1 G1 D2 S2
PMOS
D2 G2
DFN2X3-8L
Schematic Diagram
Features and Benefits
Advanced trench
MOSFET process technology Special designed for buck-boost circuit, DSC, portable
devices and general purpose applications Ultra low on-resistance with low gate charge 150℃ operating temperature Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extre...