Main Product Characteristics:
VDSS
60V
RDS(on) ID
16mΩ (typ.
) 22A
Features and Benefits:
DFN3.
3x3.
3 Bottom view
Advanced trench
MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF6014J8
Pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and...