SSFP8N80
StarMOST Power
MOSFET
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in
Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs.
This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Application
■ Switching application
VDSS = 800V ID25 = 8A RDS(ON) = 1.
55Ω
Pin1–Gate Pin2–Drain Pin1–Source
Absolute Maximum Ratings
ID@Tc=...