N-CHANNEL POWER
MOSFET
FEATURES
• Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.
) @ VDS = 800V • Lower RDS(ON): 1.
000Ω (Typ.
)
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source
Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source
Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TC = 25°C) Linear Derating Factor
Operating Junc...