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SSH9N80A

Advanced Power MOSFET

Description

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSH9N80A BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A TO-3P Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute...


Fairchild Semiconductor

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