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SSM1N45B
SSM1N45B
450V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic ballasts based on half bridge configuration.
Features
• • • • • • 0.
5A, 450V, RDS(on) = 4.
25Ω @VGS = 10 V Low gate charge ( typical 6.
5 nC) Low Crss ( typical 6.
5 pF) 100% avalanche tested Improved dv/dt capability Gate-Source
Voltage ± 50V ...