Part Number
|
SSM20G45EGH |
Manufacturer
|
Silicon Standard |
Description
|
N-channel Insulated-Gate Bipolar Transistor |
Published
|
Apr 13, 2017 |
Detailed Description
|
SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor
PRODUCT SUMMARY
V CES V CE(sat) I CP
450V 5V typ. 130A
Pb-...
|
Datasheet
|
SSM20G45EGH
|
Overview
SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor
PRODUCT SUMMARY
V CES V CE(sat) I CP
450V 5V typ.
130A
Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK)
G
D S
TO-251 (suffix J)
G DS
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit.
It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash.
The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications.
The through-hole version, the SSM20G45EGJ in TO-251, is available for vertical mounting, where a small footpri...
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