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SSM2602GY

Part Number SSM2602GY
Manufacturer Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Published Apr 13, 2017
Detailed Description SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive Lower on-resistance Surfa...
Datasheet SSM2602GY




Overview
SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.
5V gate drive Lower on-resistance Surface mount package RoHS Compliant DESCRIPTION S D D SOT-26 G D D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial–industrial applications.
BVDSS RDS(ON) ID G 20V 34mΩ 6.
3A D S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.
5V Continuous Drain Current3, VGS ...






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