SSM3J108TU
com
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J108TU
High Speed Switching Applications
• • 1.
8V drive Low on-resistance: Ron = 363mΩ (max) (@VGS = −1.
8 V) Ron = 230mΩ (max) (@VGS = −2.
5 V) Ron = 158mΩ (max) (@VGS = −4.
0 V)
2.
0±0.
1 0.
65±0.
05 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3 -0.
05 3 0.
166±0.
05
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source
voltage Gate-Source
voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −20 ±8 −1.
8 −3.
6 800 500 150 −55~150 Unit V V
1 2
mW °C °C
0.
7±0.
05
A
Using continuously under heavy...