SSM3J130TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J130TU
○ Power Management Switch Applications
• 1.
5 V drive • Low ON-resistance:RDS(ON) = 63.
2 mΩ (max) (@VGS = -1.
5 V)
RDS(ON) = 41.
1 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 31.
0 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 25.
8 mΩ (max) (@VGS = -4.
5 V)
Unit: mm
2.
1±0.
1 1.
7±0.
1
0.
3-+00.
.
015
2.
0±0.
1 0.
65±0.
05
0.
166±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source
voltage
VDSS
-20
V
Gate-Source
voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-4.
4 A
-8.
8
Power dissipation
PD (Note 1)
800
mW
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temper...