SSM3K124TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K124TU
High Speed Switching Applications
• 4 V drive • Low ON-resistance:
Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V)
2.
1±0.
1 1.
7±0.
1
Unit: mm
0.
3-+00.
.
015
2.
0±0.
1 0.
65±0.
05
0.
166±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source
voltage Gate–source
voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
30
V
VGSS
± 20
V
ID
2.
4 A
IDP
4.
8
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.
g.
the appli...