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SSM3K15TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15TE
High Speed Switching Applications Analog Switch Applications
1.
2±0.
05 0.
32±0.
05 3 0.
14±0.
05 0.
8±0.
05
Unit: mm
• •
Small package
0.
45 0.
45 1.
4±0.
05 0.
9±0.
1
Low on resistance : Ron = 4.
0 Ω (max) (@VGS = 4 V) : Ron = 7.
0 Ω (max) (@VGS = 2.
5 V)
1 2
Characteristics Drain-source
voltage Gate-source
voltage Drain current DC Pulse
Symbol VDS VGSS ID IDP PD Tch Tstg
Rating 30 ±20 100 200 100 150 −55~150
Unit V V mA mW °C °C
0.
59±0.
05
Absolute Maximum Ratings (Ta = 25°C)
TESM JEDEC JEITA
1.
Gate 2.
Source 3.
Drain
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature...