SSM3K310T
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K310T
High-Speed Switching Applications
• 1.
5 V drive • Low ON-resistance:
Ron = 66 mΩ (max) (@VGS = 1.
5 V) Ron = 43 mΩ (max) (@VGS = 1.
8 V)
Ron = 32 mΩ (max) (@VGS = 2.
5 V) Ron = 28 mΩ (max) (@VGS = 4.
0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source
voltage
VDS
20
V
Gate-Source
voltage
VGSS
± 10
V
Drain current
DC Pulse
Drain power dissipation
Channel temperature
Storage temperature range
ID
5.
0 A
IDP
10.
0
PD (Note 1)
700
mW
Tch
150
°C
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/curren...