MOSFETs Silicon N-Channel MOS
SSM3K35CTC
1.
Applications
• High-Speed Switching • Analog Switches
2.
Features
(1) 1.
2-V gate drive
voltage.
(2) Low drain-source on-resistance
RDS(ON) = 9.
0 Ω (max) (@VGS = 1.
2 V, ID = 10 mA) RDS(ON) = 3.
1 Ω (max) (@VGS = 1.
5 V, ID = 20 mA) RDS(ON) = 2.
4 Ω (max) (@VGS = 1.
8 V, ID = 150 mA) RDS(ON) = 1.
6 Ω (max) (@VGS = 2.
5 V, ID = 150 mA) RDS(ON) = 1.
1 Ω (max) (@VGS = 4.
5 V, ID = 150 mA)
3.
Packaging and Pin Assignment
CST3C
SSM3K35CTC
1: Gate 2: Source 3: Drain
©2016-2017 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-04
2017-12-04 Rev.
3.
0
SSM3K35CTC
4.
Absolute Maximum Ratings (Note) (Unless otherwise specif...