SSM6J06FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J06FU
Power Management Switch High Speed Switching Applications
• • • Small package Low on resistance : Ron = 0.
5 Ω max (VGS = −4 V) : Ron = 0.
7 Ω max (VGS = −2.
5 V) Low gate threshold
voltage
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Gate-source
voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±12 −650 −1300 300 150 −55~150 Unit V V mA
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
mW °C °C
JEDEC
―
Note:
JEITA ― Using continuously under heavy loads (e.
g.
the application of TOSHIB...