SSM6J08FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch DC-DC Converter
Unit: mm
• Small Package • Low on Resistance : Ron = 0.
18 Ω (max) (@VGS = −4 V)
: Ron = 0.
26 Ω (max) (@VGS = −2.
5 V) • Low Gate Threshold
Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source
voltage
VDS
−20
V
Gate-Source
voltage
VGSS
±12
V
Drain current
DC
ID
−1.
3
A
Pulse
IDP (Note 2)
−2.
6
Drain power dissipation
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.
g.
the application of
JEIT...