MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J215FE
1.
Applications
• Power Management Switches
2.
Features
(1) 1.
5-V gate drive
voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 154 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 79 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 59 mΩ (max) (@VGS = -4.
5 V)
3.
Packaging and Pin Configuration
ES6
SSM6J215FE
1,2,5,6: Drain 3: Gate 4: Source
Start of commercial production
2011-07
1
2014-04-04
Rev.
2.
0
SSM6J215FE
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS
-20
V
Gate-source
voltage
VGSS
±8
Drain current (DC)
(Note 1)
I...