SSM6J53FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J53FE
○ High-Speed Switching Applications ○ Power Management Switch Applications
• • • 1.
5 V drive Suitable for high-density mounting due to compact package Unit : mm
1.
6±0.
05 1.
2±0.
05 0.
2±0.
05 0.
5
1.
6±0.
05
1.
0±0.
05
Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.
5 V) : Ron = 204 mΩ (max) (@VGS = -1.
8 V) : Ron = 364 mΩ (max) (@VGS = -1.
5 V)
Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.
8 -3.
6 500 150 −55~150 Unit V V A mW °C °C
1 2 3
6 5 4 0.
12±0.
05
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source
voltage Gate-Source
voltage Drain current Drain powe...