MOSFETs Silicon N-Channel MOS
SSM6K202FE
1.
Applications
• High-Speed Switching • Power Management Switches
2.
Features
(1) 1.
8-V drive (2) Low drain-source on-resistance
: RDS(ON) = 145 mΩ (max) (@VGS = 1.
8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.
0 V)
3.
Packaging and Internal Circuit
ES6
SSM6K202FE
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain
©2021-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2006-03
2022-02-03 Rev.
1.
0
SSM6K202FE
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage Gate-source
voltage
VDSS
30
V
VGS...