MOSFETs Silicon N-channel MOS (U-MOS-H)
SSM6K361NU
1.
Applications
• Power Management Switches • DC-DC Converters
2.
Features
(1) 4.
5 V drive (2) Low drain-source on-resistance
: RDS(ON) = 65 mΩ (typ.
) (@VGS = 4.
5 V) RDS(ON) = 51 mΩ (typ.
) (@VGS = 10 V)
3.
Packaging and Pin Assignment
UDFN6B
SSM6K361NU
1, 2, 5, 6: Drain 3: Gate 4: Source
©2016-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2016-12
2020-04-17 Rev.
7.
0
SSM6K361NU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS
100
V
Gate-source
voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
3.
5
...