SSM6K411TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K411TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • 2.
5-V drive Low ON-resistance:RDS(ON) = 23.
8 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 14.
3 mΩ (max) (@VGS = 3.
5 V)
0.
65 0.
65 2.
1±0.
1 1.
7±0.
1
Unit: mm
RDS(ON) = 12 mΩ (max) (@VGS = 4.
5 V)
2.
0±0.
1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source
voltage Gate-Source
voltage Drain current DC Pulse Symbol VDSS VGSS ID (Note1) IDP(Note1) PD (Note2) t10s Tch Tstg Rating 20 ±12 10 20 1 2 150 −55 to 150 Unit
2 3
5 4
V A
0.
7±0.
05
V
Power dissipation Channel temperature Storage temperature range
W °C °C
1,2,5,6 : Drain
UF6...