SSM6L09FU
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI)
SSM6L09FU
Power Management Switch High Speed Switching Applications
Unit: mm
• Small package • Low on-resistance
Q1: RDS(ON) = 0.
7 Ω (max) (@VGS = 10 V) Q2: RDS(ON) = 2.
7 Ω (max) (@VGS = −10 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source
voltage Gate-Source
voltage
Drain current
DC Pulse
Symbol
VDSS VGSS
ID IDP
Rating
Unit
30
V
±20
V
400 mA
800
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source
voltage Gate-Source
voltage
Drain current
DC Pulse
Symbol
VDSS VGSS
ID IDP
Rating
Unit
−30
V
±20
V
−200 mA
−400
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
...