SSM6L11TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L11TU
High Speed Switching Applications
• Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.
8 V)
Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.
5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
2.
1±0.
1 1.
7±0.
1
Unit: mm
+0.
1 0.
3-0.
05
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDS
20
V
Gate-source
voltage
VGSS
± 12
V
Drain current
DC
ID
Pulse
IDP
0.
5 A
1.
5
Q2 Absolute Maximum Ratings (Ta = 25°C)
2.
0±0.
1 1.
3±0.
1 0.
65 0.
65
1
6
2
5
3
4
+0.
06 0.
16-0.
05
0.
7±0.
05
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDS
-20
V
Ga...