SSM6N39TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N39TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • • 1.
5-V drive N-ch 2-in-1 Low ON-resistance: Unit: mm
2.
1±0.
1 1.
7±0.
1 0.
65 0.
65 1 2 3 6 5 4 0.
166±0.
05
Ron = 247mΩ (max) (@VGS = 1.
5 V) Ron = 190mΩ (max) (@VGS = 1.
8 V) Ron = 139mΩ (max) (@VGS = 2.
5 V) Ron = 119mΩ (max) (@VGS = 4.
0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
Characteristic Drain-source
voltage Gate-source
voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ± 10 1.
6 3.
2 500 150 −55 to 150 Unit V V A mW °C...